공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
설명
유통업체에서 제공한 Infineon IRFSL4510PBF에 대한 설명입니다.
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 61A 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET N CH 100V, 61A, TO262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:140W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
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기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)61 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance13.9 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.18 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
On-State Resistance13.9 mΩ
Package Quantity1000
Power Dissipation140 W
Rds On Max13.9 mΩ
Rise Time32 ns
Threshold Voltage3 V
Turn-Off Delay Time28 ns
Turn-On Delay Time13 ns