공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-10-05
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-06-26
LTD Date2012-09-26
관련 부품
설명
유통업체에서 제공한 Infineon IRF1407LPBF에 대한 설명입니다.
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
MOSFET, 75V, 100A, 7.8 MOHM, 160 NC QG, TO-262
Trans MOSFET N-CH 75V 100A 3-Pin(3+Tab) TO-262
Power Field-Effect Transistor, 75A I(D), 75V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:100A; On Resistance, Rds(on):7.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating130 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7.8 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time140 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation200 W
Rise Time150 ns
Turn-Off Delay Time150 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)75 V