공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-06
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
관련 부품
설명
유통업체에서 제공한 Infineon IRFSL4410ZPBF에 대한 설명입니다.
N CH POWER MOSFET, HEXFET, 100V, 97A, TO-262; Transistor Polarity:N Channel; Con
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 100V 97A 3-Pin(3+Tab) TO-262 Tube
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Infineon NChannel EnhancedMOSTube StrongIRFETseries, Vds=100 V, 97 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- INFINEON TECHNOLOGIE
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기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)97 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max9 mΩ
Rise Time52 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm