공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-15
Lifecycle StatusProduction (Last Updated: 2 months ago)
관련 부품
InfineonIRFSL4410ZPBF
N CH POWER MOSFET, HEXFET, 100V, 97A, TO-262; Transistor Polarity:N Channel; Con
InfineonIPI045N10N3GXKSA1
Mosfet, N-Ch, 100V, 137A, To-262 Rohs Compliant: Yes |Infineon Technologies IPI045N10N3GXKSA1
InfineonIRFSL3207ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.3Milliohms;ID 170A;TO-262;PD 300W;VF 1.3V
설명
유통업체에서 제공한 Infineon IRFSL4310ZPBF에 대한 설명입니다.
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 100V 127A 3-Pin(3+Tab) TO-262 Tube
MOSFET, 100V, 127A, 6 MOHM, 120 NC QG, TO-262
POWER FIELD-EFFECT TRANSISTORS
MOSFET, N-CH, 100V, 127A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 127A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
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기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance6 mΩ
Package Quantity1000
Power Dissipation250 W
Rds On Max6 mΩ
Rise Time60 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Dimensions
Height15.01 mm
Length10.668 mm
Width4.826 mm