대체 부품
Price @ 1000
$ 1.846
$ 4.81
Stock
365,129
72,727
Authorized Distributors
6
1
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
TO-263-7
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
269 A
269 A
Threshold Voltage
-
2.1 V
Rds On Max
2 mΩ
2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.97 nF
13.97 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-20
Lifecycle StatusProduction (Last Updated: 5 months ago)
관련 부품
InfineonIRFS7730-7PPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
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STMicroelectronicsSTH260N6F6-6
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
STMicroelectronicsSTH240N75F3-6
N-channel 75 V, 2.6 mOhm typ., 180 A STripFET(TM) III Power MOSFET in H2PAK-6 package
설명
유통업체에서 제공한 Infineon IRFS7730TRL7PP에 대한 설명입니다.
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
Infineon SCT
Single N-Channel 75V 2 mOhm 285 nC HEXFET® Power Mosfet - D2PAK-7
Trans MOSFET N-CH Si 75V 269A 7-Pin(6+Tab) D2PAK T/R
Power Field-Effect Transistor, 269A I(D), 75V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH, 75V, 240A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
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- Infineon Technologies
- INF
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.59999 g
Technical
Continuous Drain Current (ID)269 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time91 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time90 ns
Schedule B8541290080
Turn-Off Delay Time182 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm