대체 부품
Price @ 1000
$ 1.769
$ 1.62
Stock
504,020
83,790
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
3.7 V
3.7 V
Rds On Max
1.4 mΩ
1.4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
12.96 nF
12.96 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRFS7534TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
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Power MOSFET, N Channel, 60 V, 180 A, 0.0012 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTH265N6F6-6AG
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFS7530TRL7PP에 대한 설명입니다.
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 240 A, 0.00115 ohm, TO-263 (D2PAK), Surface Mount
Single N-Channel 60 V 1.4 mOhm 236 nC HEXFET® Power Mosfet - D2PAK-7
MOSFET, 60V,240A, 1.4mOhm, 236nC, D2PAK7 Pin
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Weight1.59999 g
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.4 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time79 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance12.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity800
Power Dissipation375 W
Rds On Max1.4 mΩ
Rise Time102 ns
Schedule B8541290080
Threshold Voltage3.7 V
Turn-Off Delay Time168 ns
Turn-On Delay Time24 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm