대체 부품
Price @ 1000
$ 4.81
$ 1.678
Stock
59,525
302,121
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
TO-263-7
Drain to Source Voltage (Vds)
75 V
75 V
Continuous Drain Current (ID)
269 A
269 A
Threshold Voltage
2.1 V
-
Rds On Max
2 mΩ
2 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
13.97 nF
13.97 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-20
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRFS7530TRL7PP
MOSFET N CH 60V 240A D2PAK N-Channel 60 V 240A (Tc) 375W (Tc) Surface Mount PG-TO263-7
InfineonIRFS7530TRLPBF
MOSFET N CH 60V 195A D2PAK N-Channel 60 V 195A (Tc) 375W (Tc) Surface Mount PG-TO263-2
InfineonIRFS7534TRL7PP
MOSFET N CH 60V 240A D2PAK N-Channel 60 V 240A (Tc) 290W (Tc) Surface Mount D2PAK (7-Lead)
설명
유통업체에서 제공한 Infineon IRFS7730-7PPBF에 대한 설명입니다.
MOSFET N-CH 75V 240A D2PAK N-Channel 75 V 240A (Tc) 375W (Tc) Surface Mount D2PAK (7-Lead)
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
Infineon SCT
Single N-Channel 75 V 2 mOhm 285 nC HEXFET® Power Mosfet - D2PAK-7
Trans MOSFET N-CH 75V 269A 7-Pin(6+Tab) D2PAK Tube
MOSFET, 75V, 240A, 2.0 Ohm, 285 nC, D2PAK 7 Pin, TUBE
MOSFET, N-CH, 75V, 269A, TO-263-7; Transistor Polarity: N Channel; Continuous Drain Current Id: 269A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0017ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.59999 g
Technical
Continuous Drain Current (ID)269 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time91 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.97 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity3000
Power Dissipation375 W
Rds On Max2 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time182 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm