대체 부품
Price @ 1000
$ 1.867
Stock
17,211
262,765
Authorized Distributors
0
4
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
-
3.7 V
Rds On Max
1.95 mΩ
1.95 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
290 W
290 W
Input Capacitance
9.99 nF
9.99 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIRFS7530TRL7PP
Trans MOSFET N-CH Si 60V 338A 7-Pin(6+Tab) D2PAK T/R / MOSFET N CH 60V 240A D2PAK
InfineonIRFS7534TRL7PP
INFINEON IRFS7534TRL7PP MOSFET Transistor, N Channel, 240 A, 60 V, 0.0016 ohm, 10 V, 3.7 V
STMicroelectronicsSTH260N6F6-6
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
onsemiFDB0170N607L
FDB0170N607L Series 60 V 300 A 1.4 mOhm N-Channel Power Trench Mosfet - D2PAK-7
STMicroelectronicsSTH265N6F6-6AG
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFS7534-7PPBF에 대한 설명입니다.
MOSFET N CH 60V 240A D2PAK / N-Channel 60 V 240A (Tc) 290W (Tc) Surface Mount D2PAK (7-Lead)
60V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
Single N-Channel 60 V 1.95 mOhm 200 nC HEXFET® Power Mosfet - D2PAK-7
Trans MOSFET N-CH 60V 255A 7-Pin(6+Tab) D2PAK Tube
Power Field-Effect Transistor, 240A I(D), 60V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.59999 g
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.95 Ω
Drain to Source Voltage (Vdss)60 V
Fall Time86 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.99 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation290 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.95 mΩ
Package Quantity3000
Power Dissipation290 W
Rds On Max1.95 mΩ
Rise Time120 ns
Turn-Off Delay Time195 ns
Turn-On Delay Time140 ns
Dimensions
Height5.084 mm