가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFS3006TRL7PP | 800 | 800 | 4h | ||||||||
| Newark | IRFS3006TRL7PP | 766 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFS3006TRL7PP | 123,200 | 800 | Tape & Reel | ||||||||
| Arrow Electronics | IRFS3006TRL7PP | 780 | 1 | |||||||||
| Rochester Electronics | IRFS3006TRL7PP | 153,600 | 2h |
대체 부품
Price @ 1000
$ 2.184
$ 6.94
Stock
586,990
128,891
Authorized Distributors
6
2
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-7
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
-
4 V
Rds On Max
2.1 mΩ
2.1 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
8.85 nF
8.85 nF
관련 부품
InfineonAUIRFS3006-7P
MOSFET, N-CH, 60V, 293A, D2PAK-7P; Transistor Polarity:N Channel; Continuous Dra
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MOSFET N CH 60V 195A D2PAK / Trans MOSFET N-CH Si 60V 295A 3-Pin(2+Tab) D2PAK T/R
STMicroelectronicsSTH250N55F3-6
N-channel 55 V, 2.2 mOhm, 180 A, H2PAK, STripFET III Power MOSFET
STMicroelectronicsSTH260N6F6-6
N-channel 60 V, 1.7 mOhm typ., 180 A STripFET F6 Power MOSFET in H2PAK-6 package
STMicroelectronicsSTH265N6F6-6AG
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFS3006TRL7PP에 대한 설명입니다.
Single N-Channel 60 V 2.1 mOhm 300 nC HEXFET® Power Mosfet - D2PAK-7
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 240 A, 0.0015 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 60V 293A 7-Pin(6+Tab) D2PAK T/R
MOSFET, N-CH, 60V, 240A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Source Voltage Vds:60V; On Resistance
HEXFET POWER MOSFET Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
MOSFET, N-CH, 60V, 240A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 240A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0015ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 7Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.85 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.1 mΩ
Package Quantity800
Power Dissipation375 W
Rds On Max2.1 mΩ
Resistance2.1 MΩ
Rise Time61 ns
Schedule B8541290080
Turn-Off Delay Time118 ns
Turn-On Delay Time14 ns
Dimensions
Height5.084 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책