공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-05-17
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
onsemiFDB52N20TM
In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
InfineonIRFS31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
InfineonIRFS52N15DTRRP
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;D2Pak;PD 230W;VGS +/-30
설명
유통업체에서 제공한 Infineon IRFS38N20DTRLP에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.054Ohm;ID 43A;D2Pak;PD 300W;VGS +/-30V
Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 200 V, 43 A, 0.054 ohm, TO-263 (D2PAK), Surface Mount
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 200V, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:200V; Current, Id Cont:44A; Resistance, Rds On:0.054ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:D2-PAK; ;RoHS Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
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- Infineon Technologies
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- INFIN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)43 A
Current Rating44 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance54 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time47 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance54 mΩ
Package Quantity800
PackagingCut Tape
Power Dissipation3.8 W
Rds On Max54 mΩ
Resistance54 mΩ
Rise Time95 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm