공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
설명
유통업체에서 제공한 onsemi FDB52N20TM에 대한 설명입니다.
In a Pack of 5, N-Channel MOSFET, 52 A, 200 V, 3-Pin D2PAK ON Semiconductor FDB52N20TM
Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK
Power MOSFET, N Channel, 200 V, 52 A, 0.049 ohm, TO-263AB, Surface Mount
Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)52 A
Current Rating52 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance49 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time150 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation357 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation357 W
Rds On Max49 mΩ
Resistance49 mΩ
Rise Time160 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time48 ns
Turn-On Delay Time53 ns
Voltage Rating (DC)200 V
Dimensions
Height5.08 mm
Length9.98 mm
Width10.16 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책