대체 부품
Price @ 1000
$ 3.56
$ 1.098
$ 1.098
Stock
40,524
331,088
331,088
Authorized Distributors
1
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
150 V
150 V
150 V
Continuous Drain Current (ID)
51 A
51 A
51 A
Threshold Voltage
5 V
-
-
Rds On Max
32 mΩ
32 mΩ
32 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
2.77 nF
2.77 nF
2.77 nF
관련 부품
InfineonIRF3415SPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;D2Pak;PD 200W;VGS +/-20V
InfineonIRFS4321TRLPBF
Single N-Channel 150 V 360 W 71 nC Hexfet Power Mosfet Surface Mount - D2PAK
설명
유통업체에서 제공한 Infineon IRFS52N15DPBF에 대한 설명입니다.
Transistor MOSFET Negative Channel 150 Volt 51A 3-Pin(2+Tab) D2PAK
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;D2Pak;PD 230W;VGS +/-30
Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin (2+Tab) D2PAK
MOSFET, N, 150V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:43A; Cont Current Id @ 25°C:60A; Current Id Max:60A; Package / Case:D2-PAK; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Rth:0.47; Termination Type:SMD; Voltage Vds:150V; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Current Rating60 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance32 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max32 mΩ
Resistance32 MΩ
Rise Time47 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time28 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)150 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm