공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIRFS23N20DPBF
Single N-Channel 200 V 3.8 W 57 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
InfineonIRFS23N20DTRLP
N CH SMPS MOSFET, NEXFET, 200V, 24A, D2PAK; Transistor Polarity:N Channel; Conti
STMicroelectronicsSTB30NF20L
MOSFET N CH 200V 30A D2PAK / N-Channel 200 V 30A (Tc) 150W (Tc) Surface Mount D2PAK
설명
유통업체에서 제공한 Infineon IRFS31N20DPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;D2Pak;PD 200W;VGS +/-30V
Single N-Channel 200 V 0.082 Ohm 70 nC HEXFET® Power Mosfet - D2PAK
Transistor MOSFET N Channel 200 Volt 31.6 Amp 3 Pin 2+ Tab D2pak
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 200V 31A 3-Pin(2+Tab) D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
MOSFET, N, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):82mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:3.1W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:31A; Current Temperature:25°C; External Length / Height:4.69mm; External Width:10.54mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:D2-PAK; Power Dissipation Pd:3.1W; Power Dissipation Pd:3.1W; Pulse Current Idm:124A; SMD Marking:FS31N20D; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
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- Infineon Technologies
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)31 A
Current Rating31 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.37 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance82 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation200 W
Rds On Max82 mΩ
Resistance82 mΩ
Rise Time38 ns
Schedule B8541290080
Threshold Voltage5.5 V
Turn-Off Delay Time26 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height4.826 mm
Length10.668 mm