Infineon IRFS3206PBF

Name: Infineon IRFS3206PBF
Brand: Infineon
SKU: IRFS3206PBF

IRFS3206PBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin D2PAK

$ 3.98

Obsolete

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFS3206PBF	0	300	Bulk				3.980	3.980	10h
Farnell	IRFS3206PBF	0	1		3.504*	2.631*	2.296*	1.651*	1.651*	18h
Win Source	WS-IRFS3206PBF	72,578	35				1.457	1.206	1.206	19h
Worldway Electronics	IRFS3206PBF	10,773	7	Tube		0.407	0.395	0.374	0.374	18h
Chipsmall Limited	IRFS3206PBF	135,000	1		1.170	0.780	0.468	0.390	0.390	2h

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFS3206PBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Farnell

Datasheet12 페이지12년 전

IHS

Newark

iiiC

DigiKey

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InfineonIRFS3206PBF

InfineonIRFS3206TRRPBF

Price @ 1000

$ 3.98

$ 1.14

Stock

373,203

350,235

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

6.54 nF

공급망

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-04-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRFS3206PBF에 대한 설명입니다.

IRFS3206PBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin D2PAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube / MOSFET N-CH 60V 120A D2PAK

Win Source

60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 60 V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N, 60V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC