가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 13AC9152 | 123 | 1 | 8h | ||||||||
| Newark | IRFS3206TRRPBF | 123 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFS3206TRRPBF | 15,200 | 800 | Tape & Reel | ||||||||
| Arrow Electronics | IRFS3206TRRPBF | 821 | 1 | |||||||||
| Rutronik | TMOSP12390 | 800 | 800 | 13h |
대체 부품
Price @ 1000
$ 1.14
$ 1.73
$ 1.73
Stock
386,503
47,997
47,997
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
120 A
120 A
120 A
Threshold Voltage
-
2 V
2 V
Rds On Max
3 mΩ
3 mΩ
3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 W
300 W
300 W
Input Capacitance
6.54 nF
6.54 nF
6.54 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-04-27
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonAUIRF1405ZS
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIRFS3306TRLPBF
Power MOSFET, N Channel, 60 V, 120 A, 0.0042 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
설명
유통업체에서 제공한 Infineon IRFS3206TRRPBF에 대한 설명입니다.
MOSFET N-CH 60V 120A D2PAK / Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 60 V, 120 A, 0.0024 ohm, TO-263AB, Surface Mount
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:300W; No. of Pins:3Pins RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 210 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 2.4 / Gate-Source Voltage V = 20 / Fall Time ns = 83 / Rise Time ns = 82 / Turn-OFF Delay Time ns = 55 / Turn-ON Delay Time ns = 19 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = D2PAK / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 300
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time83 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.54 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3 mΩ
Package Quantity800
Power Dissipation300 W
Rds On Max3 mΩ
Rise Time82 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time19 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책