가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFS3207TRLPBF | 9 | 1 | |||||||||
| Rochester Electronics | IRFS3207TRLPBF | 248 | 18h | |||||||||
| DigiKey | IRFS3207TRLPBFCT-ND | 800 | 1 | Cut Tape | ||||||||
| Avnet | IRFS3207TRLPBF | 0 | 800 | 20h | ||||||||
| Future Electronics | IRFS3207TRLPBF | 0 | 800 | Tape & Reel |
대체 부품
Price @ 1000
$ 1.434
$ 1.77
$ 1.77
Stock
273,640
120,759
120,759
Authorized Distributors
6
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
75 A
120 A
120 A
Threshold Voltage
4 V
-
-
Rds On Max
4.5 mΩ
4.1 mΩ
4.1 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
300 W
300 W
300 W
Input Capacitance
7.6 nF
6.92 nF
6.92 nF
공급망
Country of OriginMainland China, Mexico, UK
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-17
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
InfineonIRF2907ZSTRLPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
STMicroelectronicsSTB160N75F3
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
설명
유통업체에서 제공한 Infineon IRFS3207TRLPBF에 대한 설명입니다.
N CH POWER MOSFET, HEXFET, 75V, 170A, D2PAK; Transistor Polarity:N Channel; Cont
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 75 V 4.5 mOhm 260 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 75 V, 170 A, 0.0036 ohm, TO-263AB, Surface Mount
Trans MOSFET N-CH 75V 170A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 75V, 170A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 170A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 300W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)75 V
Fall Time74 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity800
Power Dissipation300 W
Rds On Max4.5 mΩ
Rise Time120 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time68 ns
Turn-On Delay Time29 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책