대체 부품
Price @ 1000
$ 9.27
$ 4.446
Stock
100,514
43,036
Authorized Distributors
1
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
240 A
240 A
Threshold Voltage
4 V
-
Rds On Max
2.6 mΩ
2.6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
370 W
370 W
Input Capacitance
9.2 nF
9.2 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-07
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
InfineonIRFS3107TRL7PP
N CH POWER MOSFET. HEXFET, 75V, 260A, D2PAK; Transistor Polarity:N Channel; Cont
InfineonIRFS7730-7PPBF
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
설명
유통업체에서 제공한 Infineon IRFS3107-7PPBF에 대한 설명입니다.
Single N-Channel 75 V 2.6 mOhm 240 nC HEXFET® Power Mosfet - D2PAK-7
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Pin package, D2PAK7P, RoHS
Infineon SCT
MOSFET Operating temperature: -55...175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 370 W
Trans MOSFET N-CH 75V 260A 7-Pin(6+Tab) D2PAK Tube
MOSFET, 75V, 260A, 2.6 MOHM, 160 NC QG,D2PAK-7
Power Field-Effect Transistor, 260A I(D), 75V, 0.0026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH, 75V, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:260A; Drain Source Voltage Vds:75V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:20V; Power Dissipation Pd:370W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:9200pF; Current Id Max:260A; Package / Case:D2-PAK; Power Dissipation Pd:370W; Power Dissipation Pd:370W; Pulse Current Idm:1060A; Reverse Recovery Time trr Typ:52ns; Termination Type:SMD; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation370 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity3000
Power Dissipation370 W
Rds On Max2.6 mΩ
Resistance2.6 MΩ
Reverse Recovery Time52 ns
Rise Time80 ns
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책