데이터시트 및 문서
Infineon IRFB7734PBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트13년 전
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-20
Lifecycle StatusEOL (Last Updated: 3 weeks ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
InfineonIRFB7730PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
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설명
유통업체에서 제공한 Infineon IRFB7734PBF에 대한 설명입니다.
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 75 V 3.5 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 75V 183A 3-Pin(3+Tab) TO-220AB Tube
Trench MOSFET, 75V,183A, 3.5mOhm, 180 nC, TO-220
MOSFET, N-CH, 75V, 183A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 183A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)183 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation290 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.5 mΩ
Package Quantity1000
Power Dissipation290 W
Rds On Max3.5 mΩ
Rise Time123 ns
Schedule B8541290080
Turn-Off Delay Time124 ns
Turn-On Delay Time20 ns
Dimensions
Height19.8 mm
Length10.67 mm
Width4.83 mm