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이 부품
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Price @ 1000
$ 1.47
$ 1.98
Stock
318,715
749,744
Authorized Distributors
2
6
Mount
Through Hole
Through Hole
Case/Package
TO-220AB
TO-220-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
160 A
75 A
Threshold Voltage
2 V
4 V
Rds On Max
3.3 mΩ
3.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
130 W
Input Capacitance
7.96 nF
7.96 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-07-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
STMicroelectronicsSTP185N55F3
N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP190N55LF3
N-channel 55 V, 2.9 mOhm typ., 120 A STripFET(TM) Power MOSFET in a TO-220 package
InfineonAUIRL1404Z
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon AUIRF3805에 대한 설명입니다.
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 3.3 mOhm 290 nC Automotive HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH Si 55V 210A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,N CH,55V,160A,TO220AB; Continuous Drain Current Id:210A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Transistor Case Style:TO-2220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Pd:300W; Voltage Vgs Max:20V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time87 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.3 mΩ
Package Quantity1000
Power Dissipation300 W
Rds On Max3.3 mΩ
Resistance3.3 MΩ
Rise Time20 ns
Threshold Voltage2 V
Turn-Off Delay Time93 ns
Turn-On Delay Time150 ns
Dimensions
Height20.57 mm
Length10.66 mm
Width4.82 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책