공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-23
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2021-05-13
LTD Date2021-11-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
onsemiFDPF041N06BL1
MOSFET N-CH 60V 77A TO-220F / Trans MOSFET N-CH Si 60V 77A 3-Pin(3+Tab) TO-220F Tube
InfineonIRFB7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 onsemi FDPF035N06B_F152에 대한 설명입니다.
Trans MOSFET N-CH 60V 88A 3-Pin(3+Tab) TO-220F Rail
N-Channel PowerTrench® MOSFET
Power Field-Effect Transistor, 88A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RAIL/PT7 60V 3.5MOHM TO-220F
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.270003 g
Technical
Continuous Drain Current (ID)88 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.03 nF
Max Operating Temperature175 °C
Max Power Dissipation46.3 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation46.3 W
Rds On Max3.5 mΩ
Rise Time33 ns
Turn-Off Delay Time56 ns
Turn-On Delay Time32 ns