공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
onsemiFDP023N08B-F102
MOSFET N-CH 75V 120A TO220-3 / N-Channel 75 V 120A (Tc) 245W (Tc) Through Hole TO-220-3
InfineonIRFB7734PBF
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
InfineonIPA032N06N3GXKSA1
Power MOSFET, N Channel, 60 V, 84 A, 2.6 Milliohms, TO-220, 3 Pins, Through Hole
InfineonIPP120N06S4H1AKSA2
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IRFB7730PBF에 대한 설명입니다.
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Transistor: N-MOSFET; unipolar; 75V; 246A; 375W; TO220A
Trench MOSFET, 75V,195A, 2.6mOhm, 271 nC, TO-220
Trans MOSFET N-CH Si 75V 246A 3-Pin(3+Tab) TO-220AB Tube
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 375 W
Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 75V, 195A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.66 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.6 mΩ
Rise Time120 ns
Schedule B8541290080
Threshold Voltage2.1 V
Turn-Off Delay Time180 ns
Turn-On Delay Time21 ns
Dimensions
Height19.8 mm
Length10.67 mm
Width4.83 mm