Infineon IRF9540NLPBF

IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262

Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - TO-262

-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC

Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; On Resistance Rds(On):0.117Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.3mA/V; On State Resistance Max:117mohm; P Channel Gate Charge:97nC; Package / Case:TO-262; Power Dissipation Pd:140W; Power Dissipation Pd:3.1W; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V