가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRF540NLPBF | 22,000 | 20h | |||||||||
| RS (Formerly Allied Electronics) | IRF540NLPBF | 0 | 10 | Bulk | 13h | |||||||
| Farnell | IRF540NLPBF | 0 | 1 | 6h | ||||||||
| Microchip USA | IRF540NL | 243 | 600 | Tube | 1d | |||||||
| Verical | IRF540NLPBF | 22,000 | 341 |
대체 부품
Price @ 1000
$ 1.346
$ 1.346
Stock
358,160
358,160
Authorized Distributors
3
3
Mount
Through Hole
Through Hole
Case/Package
TO-262-3
TO-262-3
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
33 A
33 A
Threshold Voltage
4 V
4 V
Rds On Max
44 mΩ
44 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
130 W
130 W
Input Capacitance
1.96 nF
1.96 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-04-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRF540ZLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20
InfineonIRF5210LPBF
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRF540NLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2
Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-262-3
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 100V, 33A, TO-262; Tra; N CHANNEL MOSFET, 100V, 33A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)33 A
Current Rating33 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance44 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.96 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation130 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance44 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation130 W
Rds On Max44 mΩ
Resistance44 MΩ
Rise Time35 ns
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)100 V
Dimensions
Height15.1 mm
Length10.668 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책