가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF9358TRPBF | 3,202 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRF9358TRPBF | 0 | 10 | Bulk | 2h | |||||||
| Avnet | IRF9358TRPBF | 0 | 4K | 12h | ||||||||
| Future Electronics | IRF9358TRPBF | 0 | 4K | Tape & Reel | ||||||||
| Farnell | IRF9358TRPBF | 0 | 5 | Cut Tape | 8h |
대체 부품
Price @ 1000
$ 0.549
$ 1.14
Stock
614,423
187,720
Authorized Distributors
5
2
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
9.2 A
9.2 A
Threshold Voltage
-1.8 V
-
Rds On Max
16.3 mΩ
16.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2 W
2 W
Input Capacitance
1.74 nF
1.74 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-02
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
관련 부품
설명
유통업체에서 제공한 Infineon IRF9358TRPBF에 대한 설명입니다.
Transistor MOSFET Array Dual P-CH 30V 9.2A 8-Pin SOIC T/R
Avnet Japan
Dual P-Channel 30 V 23.8 mOhm 19 nC HEXFET® Power Mosfet - SOIC-8
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET P-Ch MOSFET 9.2A 30V SOIC8
Dual MOSFET, P Channel, 30 V, 30 V, 9.2 A, 9.2 A, 0.013 ohm
MOSFETs; IRF9358TRPBF; INFINEON TECHNOLOGIES; -30 V; 9.2 A; 20 V; 2 W
Charge and Discharge Switch for Notebook PC Battery Application
Target Applications: Battery Protection
Infineon NMOS, Vds=30 V, 9.2 A, SO-8
DUAL P CH, -30V, -9.2A, SOIC-8; Transist; DUAL P CH, -30V, -9.2A, SOIC-8; Transistor Polarity:P Channel; Continuous Drain Current Id, P Channel:-9.2A; Drain Source Voltage Vds, P Channel:-30V; On Resistance Rds(on), P Channel:0.013ohm; Rds(on) Test Voltage Vgs:-10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance16.3 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels2
Number of Elements2
On-State Resistance16.3 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max16.3 mΩ
Rise Time7.2 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time146 ns
Turn-On Delay Time5.7 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm