가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF8313TRPBF | 0 | 20 | Bulk | 13h | |||||||
| Farnell | IRF8313TRPBF | 0 | 1 | Cut Tape | 1d | |||||||
| Weyland Electronics Group Pte. Ltd. | IRF8313TRPBF | 8,000 | 1 | Tape & Reel | 1d | |||||||
| Win Source | WS-IRF8313TRPBF | 18,430 | 27 | 1d | ||||||||
| Worldway Electronics | IRF8313TRPBF | 8,394 | 7 | Tape & Reel | 1d |
공급망
Country of OriginMainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-11-05
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRF8707GTRPBF
N CH POWER MOSFET, HEXFET, 30V, 11A, SO-8; Transistor Polarity:N Channel; Contin
설명
유통업체에서 제공한 Infineon IRF8313TRPBF에 대한 설명입니다.
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC T/R
Avnet Japan
Dual N-Channel 30 V 21.6 mOhm 9 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:9.7A; On Resistance Rds(On):0.0125Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V Rohs Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.7 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance15.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time4.2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance760 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
On-State Resistance15.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max15.5 mΩ
Resistance15.5 MΩ
Rise Time9.9 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time8.5 ns
Turn-On Delay Time8.3 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm