대체 부품
Price @ 1000
$ 1.14
$ 0.549
Stock
186,948
615,385
Authorized Distributors
2
5
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
9.2 A
9.2 A
Threshold Voltage
-
-1.8 V
Rds On Max
16.3 mΩ
16.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2 W
2 W
Input Capacitance
1.74 nF
1.74 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-01-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Infineon IRF9358PBF에 대한 설명입니다.
Dual P-Channel 30 V 16.3 mOhm 19 nC HEXFET® Power Mosfet - SOIC-8
Transistor MOSFET Array Dual P-CH 30V 9.2A 8-Pin SOIC Tube
MOSFET Dual P-Ch 30V 9.2A HEXFET SOIC8
Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0163ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET,PP CH,30V,9.22A,SO8; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:-9.2A; Drain Source Voltage Vds:-30V; Module Configuration:Dual; On Resistance Rds(on):0.013ohm; Power Dissipation Pd:2W
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)9.2 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance16.3 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationDual
Fall Time69 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.74 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels2
Number of Elements2
On-State Resistance16.3 mΩ
Package Quantity3800
Power Dissipation2 W
Rds On Max16.3 mΩ
Recovery Time83 ns
Resistance16.3 MΩ
Rise Time7.2 ns
Turn-Off Delay Time146 ns
Turn-On Delay Time5.7 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책