공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-08-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRF7389TRPBF
Dual N/P-Channel 30 V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8
VishaySI4830CDY-T1-GE3
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
Diodes Inc.ZXMN3A06DN8TA
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
Diodes Inc.ZXMC3A16DN8TA
Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
설명
유통업체에서 제공한 Infineon IRF7319PBF에 대한 설명입니다.
Dual N/P-Channel 30V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 30V 6.5A/4.9A 8-Pin SOIC Tube
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET Power MOSFET Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:6.5A; On Resistance, Rds(on):29mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:6.5A; Cont Current Id P Channel:4.9A; Current Id Max:6.5A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:29mohm; On State Resistance P Channel Max:58mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:30A; Pulse Current Idm N Channel 2:30A; Pulse Current Idm P Channel:30A; Row Pitch:6.3mm; SMD Marking:F7319; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Elements2
On-State Resistance29 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 MΩ
Rise Time13 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time34 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Row Spacing6.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책