가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | ZXMN3A06DN8TA | 204 | 204 | |||||||||
| Arrow Electronics | ZXMN3A06DN8TA | 204 | 204 | |||||||||
| TME | ZXMN3A06DN8T-DIO-0 | 500 | 500 | 18h | ||||||||
| DigiKey | ZXMN3A06DN8CT-ND | 1,413 | 1 | Cut Tape | ||||||||
| Avnet | ZXMN3A06DN8TA | 0 | 500 | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-08-15
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.ZXMC3A16DN8TA
Dual N & P Channel 30 V 6.4 A 2.1 W Surface Mount Complementary Mosfet - SOIC-8
VishaySI4830CDY-T1-GE3
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
Diodes Inc.ZXMC3A17DN8TA
Dual N & P Channel 30 V 5.4 A 1.25 W Surface Mount Complementary Mosfet - SOIC-8
설명
유통업체에서 제공한 Diodes Inc. ZXMN3A06DN8TA에 대한 설명입니다.
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
Trans MOSFET N-CH 30V 6.2A 8-Pin SOIC T/R / MOSFET 2N-CH 30V 4.9A 8-SOIC
MOSFET, DUAL, N, 30V, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Powe
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.9 A
Current Rating4.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationDual
Fall Time9.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance796 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation2.1 W
Rds On Max35 mΩ
Resistance35 mΩ
Rise Time6.4 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time21.6 ns
Turn-On Delay Time3 ns
Voltage Rating (DC)30 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책