공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-02-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF7319TRPBF
Dual N/P-Channel 30 V 0.046/0.098 Ohm 33/34 nC HEXFET® Power Mosfet - SOIC-8
Diodes Inc.ZXMN3A06DN8TA
ZXMN3A06 Series Dual 30 V 0.035 Ohm N-Channel Enhancement Mode MOSFET - SOIC-8
VishaySI4830CDY-T1-GE3
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
설명
유통업체에서 제공한 Infineon IRF7313TRPBF에 대한 설명입니다.
Transistor MOSFET N Channel 30 Volt 6.5 .6 Amp 8 Pin SOIC Tape and Reel
MOSFET, Power;Dual N-Ch;VDSS 30V;RDS(ON) 0.029Ohm;ID 6.5A;SO-8;PD 2W;VGS +/-20V
MOSFET 2N-CH 30V 6.5A 8-SOIC / Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R
Single N-Channel 30 V 0.046 Ohm 33 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
DUAL N CHANNEL MOSFET, 30V, 6.5A; Transi; DUAL N CHANNEL MOSFET, 30V, 6.5A; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:6.5A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.023ohm; Rds(on) Test Voltage Vgs:10V
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance29 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max29 mΩ
Resistance29 mΩ
Rise Time8.9 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time26 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm