Infineon IRF7201TRPBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d

Single N-Channel 30V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8

MOSFET N-CH 30V 7.3A 8-SOIC / Trans MOSFET N-CH Si 30V 7.3A 8-Pin SOIC T/R

N CHANNEL MOSFET, 30V, 7A; Transistor PO; Polarity:N Channel; Continuous Drain Current Id:7A; Source

Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, N-CH, 30V, 7.3A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 7.3A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.03ohm; R; Available until stocks are exhausted Alternative available

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:7A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.3 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 30 / Gate-Source Voltage V = 20 / Fall Time ns = 19 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5