공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-10-01
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
InfineonIRF7403PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF
VishaySI4830CDY-T1-GE3
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
STMicroelectronicsSTS11NF30L
N-Channel 30V - 0.009 Ohm - 11A - SO-8 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
InfineonIRF7201TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
설명
유통업체에서 제공한 Infineon IRF7403TRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.022Ohm;ID 8.5A;SO-8;PD 2.5W;VGS +/-20V;VF
Single N-Channel 30 V 0.022 Ohm 57 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC T/R
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N-CH, 30V, 8.5A, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)6.7 A
Current Rating8.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vds)30 V
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max22 mΩ
Resistance22 mΩ
Rise Time37 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time42 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm