공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-02-18
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
관련 부품
InfineonIRF7201TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
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Dual N/P-Channel 30 V 0.029/0.058 Ohm 22/23 nC HEXFET® Power Mosfet - SOIC-8
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VishaySI4830CDY-T1-GE3
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
VishaySI4532CDY-T1-GE3
SI4532CDY-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR,4.3 A,6 A,30V,8-PIN SOIC
설명
유통업체에서 제공한 Infineon IRF7201PBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7.3A;SO-8;PD 2.5W;VGS +/-20V;-55d
Single N-Channel 30 V 0.03 Ohm 19 nC HEXFET® Power Mosfet - SOIC-8
MOSFET N-CH 30V 7.3A 8SO N-Channel 30 V 7.3A (Tc) 2.5W (Tc) Surface Mount 8-SO
Trans MOSFET N-CH 30V 7.3A 8-Pin SOIC Tube
MOSFET, N-Ch, 1-Ch, 30V, 30mΩ@7.3A,10V, 7.3A, 550pF@25V, SOIC-8, SMD, 4.9mm × 3.9mm × 1.75mm, 2.5W(Tc), 20V, 1V@250µA, 28nC@10V
HEXFET POWER MOSFET Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.3A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:58A; SMD Marking:F7201; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)7.3 A
Current Rating7.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vds)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance550 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance30 mΩ
Package Quantity3800
PackagingBulk
Power Dissipation2.5 W
Rds On Max30 mΩ
Recovery Time73 ns
Resistance30 mΩ
Rise Time35 ns
Threshold Voltage1 V
Turn-Off Delay Time21 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)30 V
Dimensions
Height1.75 mm
Length4.9784 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책