공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-07-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
관련 부품
InfineonIRF6729MTR1PBF
Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTL150N3LLH5
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
설명
유통업체에서 제공한 Infineon IRF6618TR1PBF에 대한 설명입니다.
30V N-CHANNEL HEXFET POWER MOSFET WITH 20 VOLT GATE, DIRECTFET MT
Trans MOSFET N-CH 30V 30A 7-Pin Direct-FET MT T/R
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MT ;RoHS Compliant: Yes
MOSFET, N, DIRECTFET, 30V, MT; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:30A; Resistance, Rds On:2.2mohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.64V; Case Style:MT; Termination Type:SMD; Base Number:6618; Current, Idm Pulse:240A; Marking, SMD:2.8; Power Dissipation:2.8mW; Voltage, Vds:30V; Voltage, Vgs th Max:2.35V; Voltage, Vgs th Min:1.35V
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기술 사양
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)30 A
Current Rating30 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.2 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time8.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.64 nF
Max Operating Temperature150 °C
Max Power Dissipation89 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.64 V
Number of Elements1
Power Dissipation89 W
Rds On Max2.2 mΩ
Resistance2.2 MΩ
Rise Time71 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time21 ns
Voltage Rating (DC)30 V
Dimensions
Height506 µm
Length6.35 mm
Width5.05 mm