Infineon IRF6729MTR1PBF

Name: Infineon IRF6729MTR1PBF
Brand: Infineon
SKU: IRF6729MTR1PBF

Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 4.57

Obsolete

제조업체 페이지 데이터시트

가격 및 재고

공인 유통업체

비공인 재고 유통업체

비공인 딜러

모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6729MTR1PBF	0	1K	Bulk				4.570	4.160	12h
Farnell	IRF6729MTR1PBF	0	1		3.599*	3.599*	2.209*	1.513*	1.513*	6h
Klychip	IRF6729MTR1PBF	문의하기	1							>1wk
QUARKTWIN TECHNOLOGY LTD	IRF6729MTR1PBF	문의하기								>1wk
North Star Micro	NS-IRF6729MTR1PBF	문의하기								4d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

대체 부품

0개의 부품을 구매할 수 있습니다

데이터시트 및 문서

Infineon IRF6729MTR1PBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet9 페이지17년 전

공급망

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-06-20

LTD Date2014-12-20

설명

유통업체에서 제공한 Infineon IRF6729MTR1PBF에 대한 설명입니다.

Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes

Newark

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 31 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)

Farnell