가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFZ34NSTRLPBF | 1,216 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFZ34NSTRLPBF | 132,000 | 800 | Tape & Reel | ||||||||
| Rochester Electronics | IRFZ34NSTRLPBF | 4,790 | 23h | |||||||||
| Arrow Electronics | IRFZ34NSTRLPBF | 802 | 1 | |||||||||
| DigiKey | IRFZ34NSTRLPBFCT-ND | 1,576 | 1 | Cut Tape |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1995-11-01
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
InfineonIRFZ34NSPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.04Ohm;ID 29A;D2Pak;PD 68W;VGS +/-20V;Qg 34
InfineonIRLZ34NSTRLPBF
Power MOSFET, N Channel, 55 V, 30 A, 0.035 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB36NF06LT4
N-channel 60V - 0.032Ohm - 30A - D2PAK STripFET(TM) II Power MOSFET
InfineonIRF5305STRLPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS +/-20V
설명
유통업체에서 제공한 Infineon IRFZ34NSTRLPBF에 대한 설명입니다.
Single N-Channel 55V 0.04 Ohm 34 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 29A 3-Pin(2+Tab) D2PAK T/R
IRFZ34NSTRLPBF,MOSFET, 55V, 29 A, 40 MOHM, 22.7 NC QG, D2-PA
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:29A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 29 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 20 / Fall Time ns = 40 / Rise Time ns = 49 / Turn-OFF Delay Time ns = 31 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 68
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- Infineon Technologies
- INF
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- INFINEON TECHNOLOGIE
- NFINEON
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- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)29 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance700 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation68 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance40 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max40 mΩ
Resistance40 mΩ
Rise Time49 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time31 ns
Turn-On Delay Time7 ns
Dimensions
Height5.084 mm
Length10.668 mm