대체 부품
Price @ 1000
$ 0.89
$ 1.73
$ 1.73
Stock
460,322
111,981
111,981
Authorized Distributors
6
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vds)
100 V
100 V
100 V
Continuous Drain Current (ID)
59 A
59 A
59 A
Threshold Voltage
-
2 V
2 V
Rds On Max
18 mΩ
18 mΩ
18 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
160 W
160 W
160 W
Input Capacitance
2.9 nF
2.9 nF
2.9 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-05-10
Lifecycle StatusEOL (Last Updated: 5 months ago)
LTB Date2026-09-30
LTD Date2027-03-31
관련 부품
STMicroelectronicsSTB40NF10T4
Mosfet Transistor, N Channel, 40 A, 100 V, 28 Mohm, 10 V, 1.7 V |Stmicroelectronics STB40NF10T4
onsemiHUF75639S3S
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
설명
유통업체에서 제공한 Infineon IRF3710ZSTRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;D2Pak;PD 160W;VGS +/-20
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 59A 3-Pin (2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:59A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:160W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRF3710ZSTRLPBF.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)59 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vds)100 V
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance18 mΩ
Package Quantity800
Power Dissipation160 W
Rds On Max18 mΩ
Resistance18 MΩ
Rise Time77 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책