onsemi HUF75639S3S

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
$ 1.294
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi HUF75639S3S에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지24년 전

onsemi

Fairchild Semiconductor

Jameco

iiiC

재고 내역

3개월간의 트렌드:
Restocked

공급망

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02

관련 부품

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Single N-Channel 100 V 23 mOhm 130nC HEXFET® Power Mosfet - D2PAK
STMicroelectronicsSTB40NF10T4
Mosfet Transistor, N Channel, 40 A, 100 V, 28 Mohm, 10 V, 1.7 V |Stmicroelectronics STB40NF10T4
N-Channel Power MOSFET, QFET®, 100 V, 55 A, 26 mΩ, D2PAK

설명

유통업체에서 제공한 onsemi HUF75639S3S에 대한 설명입니다.

56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
Trans MOSFET N-CH 100V 56A 3-Pin (2+Tab) TO-263AB Rail
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-263 ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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