가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF2804STRRPBF | 0 | 800 | Bulk | 23h | |||||||
| Mouser | 942-IRF2804STRRPBF | 750 | 1 | Tape & Reel | ||||||||
| Win Source | WS-IRF2804STRRPBF | 10,690 | 45 | 7h | ||||||||
| Worldway Electronics | IRF2804STRRPBF | 15,759 | 7 | Tape & Reel | 6h | |||||||
| Anlinkda | IRF2804STRRPBF | 44,286 | 12h |
관련 부품
STMicroelectronicsSTB80NF03L-04T4
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
InfineonIRL1404ZSTRLPBF
N CH POWER MOSFET, HEXFET, 40V, 200A, D2PAK; Transistor Polarity:N Channel; Cont
STMicroelectronicsSTB120N4LF6
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
설명
유통업체에서 제공한 Infineon IRF2804STRRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 1.8Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
Single N-Channel 40 V 2 mOhm 160nC HEXFET® Power Mosfet - D2PAK
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 40V 280A 3-Pin(2+Tab) D2PAK T/R
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):2mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.45 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.3 mΩ
Package Quantity800
Power Dissipation300 W
Rds On Max2 mΩ
Resistance2 MΩ
Rise Time120 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time13 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책