대체 부품
Price @ 1000
$ 1.469
$ 1.32
Stock
229,281
75,467
Authorized Distributors
5
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
30 V
-
Continuous Drain Current (ID)
80 A
80 A
Threshold Voltage
-
-
Rds On Max
4 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
5.5 nF
5.5 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2023-08-02
LTD Date2024-02-02
관련 부품
STMicroelectronicsSTB100NF03L-03T4
N-channel 30 V, 0.0026 Ohm typ., 100 A StripFET(TM) II Power MOSFET in a D2PAK package
InfineonIRF1503STRLPBF
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
InfineonIRF1503SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20
InfineonIRF3709STRLPBF
MOSFET N-CH 30V 90A D2PAK / Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK T/R
STMicroelectronicsSTB95N3LLH6
N-channel 30 V, 3.7 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in D2PAK package
설명
유통업체에서 제공한 STMicroelectronics STB80NF03L-04T4에 대한 설명입니다.
N-Channel 30V - 0.0035Ohm - 80A - D2PAK STripFET (TM) II POWER MOSFET
Trans MOSFET N-CH 30V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
Mosfet, N-Ch, 30V, 80A, 175Deg C, 300W Rohs Compliant: Yes |Stmicroelectronics STB80NF03L-04T4
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.5 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage30 V
Min Operating Temperature-60 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation300 W
Rds On Max4 mΩ
Resistance4 mΩ
Rise Time270 ns
Schedule B8541290080
Turn-Off Delay Time110 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)30 V