관련 부품
InfineonIPI50N10S3L16AKSA1
100V, N-Ch, 15 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
설명
유통업체에서 제공한 Infineon IPI80CN10NG에 대한 설명입니다.
Trans MOSFET N-CH 100V 13A 3-Pin(3+Tab) TO-262
Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3
MOSFET, N CH, 13A, 100V, PG-TO262-3; Transistor Polarity:N; Current Id Max:13A; Drain Source Voltage Vds:100V; On Resistance Rds(on):61mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:31W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO262; No. of Pins:3; Transistor Type:Power MOSFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance716 pF
Max Operating Temperature175 °C
Max Power Dissipation31 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation31 W
Rds On Max80 mΩ
Rise Time4 ns
Turn-Off Delay Time13 ns