공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1997-09-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-09-19
LTD Date2013-03-19
관련 부품
InfineonIPI70N04S406AKSA1
MOSFET N-CH 40V 70A TO262-3 / N-Channel 40 V 70A (Tc) 58W (Tc) Through Hole PG-TO262-3
InfineonAUIRFZ46NL
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-262 Package, TO262-3, RoHS
설명
유통업체에서 제공한 Infineon IRFZ24NLPBF에 대한 설명입니다.
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):70mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
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- INFI
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- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)17 A
Current Rating17 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance70 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance370 pF
Max Operating Temperature175 °C
Max Power Dissipation45 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation3.8 W
Rds On Max70 mΩ
Rise Time34 ns
Voltage Rating (DC)55 V