공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-01-31
LTD Date2025-07-31
관련 부품
InfineonAUIRFS3206
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
VishaySQM120N06-3M5L_GE3
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
onsemiBBS3002-TL-1E
MOSFET P-CH 60V 100A D2PAK / P-Channel 60 V 100A (Ta) 90W (Tc) Surface Mount D2PAK (TO-263)
VishaySUM110P06-08L-E3
Power MOSFET, P Channel, 60 V, 110 A, 0.008 ohm, TO-263 (D2PAK), Surface Mount
InfineonIRFS7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
InfineonIRFS7540PBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
설명
유통업체에서 제공한 Infineon IPB120N06S4H1ATMA2에 대한 설명입니다.
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
60V, N-Ch, 2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Infineon SCT
MOSFET, N-CH, 60V, 175DEG C, 250W; Available until stocks are exhausted Alternative available
Mosfet, N-Ch, 60V, 175Deg C, 250W Rohs Compliant: Yes |Infineon IPB120N06S4H1ATMA2
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance21.9 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation250 W
Rds On Max2.1 mΩ
Rise Time5 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time30 ns
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
RatingsAEC-Q101
REACH SVHCNo
RoHSCompliant
규정 준수 정책