가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRFS3206TRL | 9,600 | 6h | |||||||||
| Microchip USA | AUIRFS3206TRL | 125 | 150 | Tray | 22h | |||||||
| Verical | AUIRFS3206TRL | 9,600 | 118 | |||||||||
| Win Source | WS-AUIRFS3206TRL | 800 | 10 | 7h | ||||||||
| Worldway Electronics | AUIRFS3206TRL | 10,807 | 7 | Tape & Reel | 6h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIPB120N06S403ATMA2
60V, N-Ch, 2.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB120N06S402ATMA2
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
VishaySQM120N06-3M5L_GE3
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
설명
유통업체에서 제공한 Infineon AUIRFS3206TRL에 대한 설명입니다.
Trans MOSFET N-CH 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)60 V
Fall Time83 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.54 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Package Quantity800
PackagingTape & Reel
Power Dissipation300 W
Rds On Max3 mΩ
Rise Time82 ns
Turn-Off Delay Time55 ns
Turn-On Delay Time19 ns