공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-02-28
LTD Date2013-08-31
관련 부품
InfineonIPB120N06S402ATMA2
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
VishaySQM120N06-3M5L_GE3
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
설명
유통업체에서 제공한 Infineon IPB021N06N3G에 대한 설명입니다.
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
120 A 60 V 0.0021 ohm N-CHANNEL Si POWER MOSFET TO-263AB
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
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기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time24 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance23 nF
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation250 W
Rds On Max2.1 mΩ
Rise Time80 ns
Turn-Off Delay Time79 ns
Turn-On Delay Time41 ns