Infineon IPB031N08N5ATMA1

Trans MOSFET N-CH 80V 120A Automotive 3-Pin(2+Tab) D2PAK T/R

Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in D2PAK package, PG-TO263-3, RoHS

Power Field-Effect Transistor, 120A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

MOSFET, N-CH, 80V, 120A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0027ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 167W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Infineon’s OptiMOS™ 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.