가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | STH140N8F7-2 | 60 | 1 | Cut Tape | ||||||||
| DigiKey | 497-14534-1-ND | 298 | 1 | Cut Tape | ||||||||
| Future Electronics | STH140N8F7-2 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | STH140N8F7-2 | 0 | 1K | 2d | ||||||||
| Arrow Electronics | STH140N8F7-2 | 0 | 1K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-18
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTH150N10F7-2
N-channel 100 V, 0.0038 Ohm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
STMicroelectronicsSTH145N8F7-2AG
Mosfet, N-Ch, 80V, 90A, H2Pak-2 Rohs Compliant: Yes |Stmicroelectronics STH145N8F7-2AG
InfineonIRFS7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
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60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics STH140N8F7-2에 대한 설명입니다.
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STH140N8F7-2 N-channel MOSFET Transistor, 90 A, 80 V, 3-Pin H2PAK
Mosfet, N-Ch, 80V, 90A, H2Pak-2 Rohs Compliant: Yes |Stmicroelectronics STH140N8F7-2
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Weight3.949996 g
Technical
Continuous Drain Current (ID)90 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time44 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.34 nF
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Rds On Max4 mΩ
Rise Time51 ns
Turn-Off Delay Time82 ns
Turn-On Delay Time26 ns
Dimensions
Height4.8 mm
Length10.4 mm
Width15.8 mm