공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-05-29
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
onsemiFGH40N60UFDTU
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
onsemiFGH40N60SMD
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
onsemiFGH80N60FDTU
Trans IGBT Chip N-CH 600V 80A 290000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 290W TO247
설명
유통업체에서 제공한 Infineon IKW60N60H3FKSA1에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 80A 416mW Automotive 3-Pin(3+Tab) TO-247 Tube
IGBT TRENCH/FS 600V 80A TO247-3 / IGBT Trench Field Stop 600 V 80 A 416 W Through Hole PG-TO247-3
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247
416W 1.85V 600V 80mA TO-247 , 15.9mm*503cm*25.27mm
IKW60N60 - DISCRETE IGBT WITH AN
IGBT TRENCH/FS 600V 80A TO247-3
TRANSISTOR, 600V, 80A, 416W, TO-247;
High speed 600 V, 60 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
Igbt, Single, 600V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:416W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon Technologies IKW60N60H3FKSA1
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current80 A
Element ConfigurationSingle
Max Collector Current80 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation416 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation416 W
Reverse Recovery Time143 ns
Turn-Off Delay Time252 ns
Turn-On Delay Time27 ns
Dimensions
Height25.57 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeNot Halogen Free
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
규정 준수 정책