Infineon IKW75N60TFKSA1

Trans IGBT Chip N-CH 600V 80A 428000mW 3-Pin(3+Tab) TO-247 Tube

428W 80A 600V FS(Field Stop) TO-247-3-1 IGBT Transistors / Modules ROHS

600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS

IGBT, N, 600V, 75A, TO-247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:2V; Power Dissipation Pd:428W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:75A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:428W; Power Dissipation Pd:428W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Hard-switching 600 V, 75 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Configuration = Single / Continuous Collector Current (Ic) A = 75 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 428 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260