대체 부품
Price @ 1000
$ 2.2
$ 4
Stock
118,632
1,122,055
Authorized Distributors
1
6
Mount
Through Hole
-
Case/Package
TO-247
-
Collector Emitter Breakdown Voltage
600 V
600 V
Max Collector Current
60 A
60 A
Power Dissipation
-
187 W
Collector Emitter Saturation Voltage
2.05 V
2.05 V
Reverse Recovery Time
143 ns
-
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-10-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-03-31
LTD Date2024-03-31
설명
유통업체에서 제공한 Infineon IKW30N60TAFKSA1에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT TRENCH/FS 600V 60A TO247-3 / IGBT Trench Field Stop 600 V 60 A 187 W Through Hole PG-TO247-3-21
IKW30N60 - AUTOMOTIVE IGBT DISCRETES;
IGBT TRENCH/FS 600V 60A TO247-3
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.05 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation187 W
Min Operating Temperature-40 °C
Number of Elements1
Reverse Recovery Time143 ns