공급망
Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-06
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
설명
유통업체에서 제공한 Infineon IKW50N60H3FKSA1에 대한 설명입니다.
IKW50N60H3 Series 600 V 100 A Trench Field Stop IGBT - PG-TO-247-3
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
IGBT, SINGLE, 600V, 100A, TO-247-3; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 333W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of
High speed 600 V, 50 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current100 A
Max Operating Temperature175 °C
Max Power Dissipation333 W
Min Operating Temperature-40 °C
Number of Elements1
Package Quantity240
Power Dissipation333 W
Reverse Recovery Time130 ns
Schedule B8541290080
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책